DTC124E
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUATE MAXIUM RATINGS (TA = 25℃, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Supply Voltage
Input Voltage
VCC
50
V
VIN
-10 ~ +40
V
Output Current
IC
100
mA
IO
30
SOT-23/SOT-323
Power Dissipation
SOT-523
PD
200
mW
150
Junction Temperature
TJ
150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA= 25℃)
PARAMETER
SYMBOL
Input Voltage
VI(OFF)
VI(ON)
Output Voltage
Input Current
VO(ON)
II
Output Current
DC Current Gain
IO(OFF)
GI
Input Resistance
R1
Resistance Ratio
R2/R1
Transition Frequency
fT
Note: Transition frequency of the device
TEST CONDITIONS
VCC= 5V, IOUT=100μA
VOUT= 0.2V, IOUT= 5mA
IOUT/IIN= 10mA / 0.5 mA
VIN= 5V
VCC= 50V , VIN=0V
VOUT= 5V, IOUT= 5mA
VCE=10V, IE = -5mA, f=100MHz (Note )
MIN
3
56
15.4
0.8
TYP
0.1
22
1
250
MAX UNIT
0.5
V
0.3 V
0.36 mA
0.5 μA
28.6 kΩ
1.2
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-045,D