BT136-O-C-N-B Просмотр технического описания (PDF) - JILIN SINO-MICROELECTRONICS CO., LTD.

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производитель

BT136-O-C-N-B

TRIACS

JILIN SINO-MICROELECTRONICS CO., LTD. 

R

绝对最大额定值 ABSOLUTE RATINGS (TC=25℃)

项目

符号

试验条件

Parameter

Symbol

Condition

重复峰值断态电压

Repetitive peak off-state voltage

VDRM

通态方均根电流 On-state RMS current

非 重 复 浪 涌 峰 值 通 态 电 流 Non-

repetitive surge peak on-state current

IT(RMS)

ITSM

full sine wave

full sine wave ,t=20ms

full sine wave ,t=16.7ms

I2t t=10ms

通态电流临界上升率 Repetitive rate of

rise of on-state current after triggering

峰值门极电流 Peak gate current

峰值门极电压 Peak gate voltage

峰值门极功率 Peak gate power

平均门极功率 Average gate power

存储温度

Storage temperature

操作结温 Operation junction temperature

dI/dt

IGM

VGM

PGM

PG(AV)

Tstg

TVJ

ITM=6A, IG=0.2A,

dIG/dt=0.2A/μs

over any 20ms period

BT136

数 值 单位

Value Unit

±600

±800 V

4

A

25 A

27 A

3.1 A2s

50 A/μs

2

A

5

V

5W

0.5 W

-40~150 ℃

125 ℃

版本：201510I

2/7

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