CR5AS-12 Просмотр технического описания (PDF) - Kersemi Electronic Co., Ltd.
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CR5AS-12 Datasheet PDF : 7 Pages
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CR5AS-12
Parameter
RMS on-state current
Average on-state current
Symbol
IT (RMS)
IT (AV)
Ratings
7.8
5
Surge on-state current
I2t for fusing
ITSM
90
I2t
33
Peak gate power dissipation
PGM
0.5
Average gate power dissipation
PG (AV)
0.1
Peak gate forward voltage
VFGM
6
Peak gate reverse voltage
VRGM
6
Peak gate forward current
IFGM
0.3
Junction temperature
Tj
– 40 to +125
Storage temperature
Tstg
– 40 to +125
Mass
—
0.26
Notes: 1. With gate to cathode resistance RGK = 220 Ω.
Unit
Conditions
A
A
Commercial frequency, sine half wave
180° conduction, Tc = 88°C
A
60Hz sine half wave 1 full cycle,
peak value, non-repetitive
A2s
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
W
W
V
V
A
°C
°C
g
Typical value
Electrical Characteristics
Parameter
Repetitive peak reverse current
Symbol
IRRM
Min.
—
Typ.
—
Max.
2.0
Unit
mA
Repetitive peak off-state current
IDRM
—
—
2.0
mA
On-state voltage
VTM
—
—
1.8
V
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
VGT
—
—
0.8
V
VGD
0.1
—
—
V
IGT
1
—
200Note3
µA
IH
—
3.5
—
mA
Thermal resistance
Rth (j-c)
—
—
3.0
Notes: 2. The measurement point for case temperature is at anode tab.
3. If special value of IGT is required, IGT from 20 to 100 µA is possible.
°C/W
Test conditions
Tj = 125°C, VRRM applied,
RGK = 220 Ω
Tj = 125°C, VDRM applied,
RGK = 220 Ω
Tc = 25°C, ITM = 15 A,
instantaneous value
Tj = 25°C, VD = 6 V, IT = 0.1 A
Tj = 125°C, VD = 1/2 VDRM,
RGK = 220 Ω
Tj = 25°C, VD = 6 V, IT = 0.1 A
Tj = 25°C, VD = 12 V,
RGK = 220 Ω
Junction to caseNote2
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