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MTY55N20E Просмотр технического описания (PDF) - ON Semiconductor

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MTY55N20E Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
MTY55N20E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(VGS = 0, ID = 250 µA)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
(VDS = 200 Vdc, VGS = 0 Vdc)
(VDS = 200 Vdc, VGS = 0 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
Static Drain−Source On−Resistance (VGS = 10 Vdc, ID = 27.5 Adc)
Drain−Source On−Voltage (VGS = 10 Vdc)
(ID = 55 Adc)
(ID = 27.5 Adc, TJ = 125°C)
Forward Transconductance (VDS = 10 Vdc, ID = 27.5 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 100 Vdc, ID = 55 Adc,
VGS = 10 Vdc,
RG = 4.7 )
Gate Charge
(See Figure 8)
(VDS = 160 Vdc, ID = 55 Adc,
VGS = 10 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 55 Adc, VGS = 0 Vdc)
(IS = 55 Adc, VGS = 0 Vdc, TJ = 125°C)
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
Reverse Recovery Time
(See Figure 14)
Reverse Recovery Stored
Charge
(IS = 55 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/µs)
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25from package to source bond pad)
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2%.
2. Switching characteristics are independent of operating junction temperature.
trr
ta
tb
QRR
LD
LS
Min
Typ
Max
Unit
200
250
Vdc
mV/°C
µAdc
10
200
100
nAdc
2
4
Vdc
7
mV/°C
0.028 Ohm
Vdc
1.3
1.6
1.8
30
37
mhos
7200 10080
pF
1800
2520
460
920
33
66
ns
200
400
150
300
170
340
245
343
nC
33
128
79
Vdc
0.75
1.2
1.1
310
ns
220
90
4.6
µC
4.5
nH
13
nH
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