MTSF3N02HD Просмотр технического описания (PDF) - ON Semiconductor

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MTSF3N02HD

Power MOSFET 3 Amps, 20 Volts N–Channel Micro8

ON Semiconductor 

MTSF3N02HD

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(Cpk ≥ 2.0)

(Notes 2. & 4.) V(BR)DSS

(VGS = 0 Vdc, ID = 250 µAdc)

20

–

Temperature Coefficient (Positive)

–

16

Vdc

–

–

mV/°C

Zero Gate Voltage Drain Current

(VDS = 16 Vdc, VGS = 0 Vdc)

(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)

Gate–Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc)

ON CHARACTERISTICS (Note 2.)

Gate Threshold Voltage

(Cpk ≥ 2.0)

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

(Note 4.)

IDSS

IGSS

VGS(th)

µAdc

–

–

1.0

–

–

25

–

–

100

nAdc

Vdc

0.7

0.98

1.1

–

2.65

–

mV/°C

Static Drain–to–Source On–Resistance

(VGS = 4.5 Vdc, ID = 3.8 Adc)

(VGS = 2.7 Vdc, ID = 1.9 Adc)

(Cpk ≥ 2.0)

(Note 4.)

RDS(on)

–

–

mΩ

30

40

40

50

Forward Transconductance (VDS = 10 Vdc, ID = 1.9 Adc)

(Note 2.)

gFS

4.0

7.5

–

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

Output Capacitance

Transfer Capacitance

(VDS = 15 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Ciss

Coss

Crss

–

475

–

pF

–

255

–

–

110

–

SWITCHING CHARACTERISTICS (Note 3.)

Turn–On Delay Time

td(on)

–

9.5

–

ns

Rise Time

Turn–Off Delay Time

(VDS = 10 Vdc, ID = 3.8 Adc,

VGS = 4.5 Vdc, RG = 6 Ω) (Note 2.)

tr

td(off)

–

45

–

–

50

–

Fall Time

tf

–

62

–

Turn–On Delay Time

td(on)

–

19

–

ns

Rise Time

Turn–Off Delay Time

(VDD = 10 Vdc, ID = 1.9 Adc,

VGS = 2.7 Vdc, RG = 6 Ω) (Note 2.)

tr

td(off)

–

130

–

–

38

–

Fall Time

tf

–

47

–

Gate Charge

QT

–

12

17

nC

(VDS = 16 Vdc, ID = 3.8 Adc,

VGS = 4.5 Vdc)

Q1

–

1.0

–

Q2

–

5.0

–

Q3

–

3.5

–

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage

(IS = 3.8 Adc, VGS = 0 Vdc) (Note 2.)

(IS = 3.8 Adc, VGS = 0 Vdc,

TJ = 125°C)

VSD

Vdc

–

0.83

1.0

–

0.68

–

Reverse Recovery Time

(IS = 3.8 Adc, VGS = 0 Vdc,

dIS/dt = 100 A/µs) (Note 2.)

trr

–

46

–

ns

ta

–

23

–

tb

–

23

–

Reverse Recovery Storage Charge

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.

4. Reflects typical values.

Max limit – Typ

Cpk = 3 x SIGMA

QRR

–

0.05

–

µC

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