MTP1N60E Просмотр технического описания (PDF) - ON Semiconductor
Номер в каталоге
Компоненты Описание
производитель
MTP1N60E Datasheet PDF : 8 Pages
| |||
MTP1N60E
TYPICAL ELECTRICAL CHARACTERISTICS
MTP1N60
2
1.8
TJ = 25°C
1.6
1.4
VGS = 10 V
7V
6V
1.2
1
0.8
0.6
5V
0.4
0.2
4V
0
0 2 4 6 8 10 12 14 16 18 20
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
2
VDS ≥ 10 V
1.6
1.2
0.8
25°C
100°C
0.4
TJ = − 55°C
0
2 2.4 2.8 3.2 3.6 4 4.4 4.8 5.2 5.6 6
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
6.4 6.8
Figure 2. Transfer Characteristics
16
VGS = 10 V
14
12
10
8
6
4
2
TJ = 100°C
25°C
− 55°C
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
and Temperature
9
TJ = 25°C
8.5
8
7.5
7
VGS = 10 V
6.5
15 V
6
5.5
5
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.4
VGS = 10 V
2 ID = 0.5 A
1.6
1000
VGS = 0 V
100
TJ = 125°C
100°C
1.2
0.8
10
25°C
0.4
0
− 50 − 25 0 25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0
100
200
300
400
500
600
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−To−Source Leakage
Current versus Voltage
http://onsemi.com
3
Share Link: 