MMSD301T1G(2010) Просмотр технического описания (PDF) - ON Semiconductor
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MMSD301T1G Datasheet PDF : 5 Pages
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MMSD301T1G, MMSD701T1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 mA)
MMSD301T1
MMSD701T1
V(BR)R
Diode Capacitance
(VR = 0 V, f = 1.0 MHz
CT
MMSD301T1
MMSD701T1
Total Capacitance
(VR = 15 V, f = 1.0 MHz)
(VR = 20 V, f = 1.0 MHz)
Reverse Leakage
(VR = 25 V)
(VR = 35 V)
Forward Voltage
(IF = 1.0 mAdc)
(IF = 10 mA)
(IF = 1.0 mAdc)
(IF = 10 mA)
CT
MMSD301T1
MMSD701T1
IR
MMSD301T1
MMSD701T1
VF
MMSD301T1
MMSD701T1
Min
Typ
Max
Unit
30
--
70
--
V
--
--
pF
--
0.9
1.5
--
0.5
1.0
pF
--
0.9
1.5
--
0.5
1.0
--
13
200
nAdc
--
9.0
200
nAdc
Vdc
--
0.38
0.45
--
0.52
0.6
--
0.42
0.5
--
0.7
1.0
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