MMSD301T1G(2010) Просмотр технического описания (PDF) - ON Semiconductor
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MMSD301T1G Datasheet PDF : 5 Pages
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MMSD301T1G,
MMSD701T1G
SOD- 123 Schottky
Barrier Diodes
The MMSD301T1, and MMSD701T1 devices are spin--offs of our
popular MMBD301LT1, and MMBD701LT1 SOT--23 devices. They
are designed for high--efficiency UHF and VHF detector applications.
Readily available to many other fast switching RF and digital
applications.
Features
Extremely Low Minority Carrier Lifetime
Very Low Capacitance
Low Reverse Leakage
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Reverse Voltage
MMSD301T1 VR
MMSD701T1
30
Vdc
70
Forward Current (DC) Continous
IF
200
mA
Forward Power Dissipation
TA = 25C
PF
225
mW
Junction Temperature
TJ
-- 55 to +125 C
Storage Temperature Range
Tstg -- 55 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
1
Cathode
2
Anode
SOD--123
CASE 425
STYLE 1
MARKING DIAGRAM
1
XXX MG
G
xx = Specific Device Code
XT = MMSD301T1
XH = MMSD701T1
M = Date Code
G = Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
MMSD301T1G SOD--123 3000 Tape & Reel
(Pb--Free)
MMSD701T1G SOD--123 3000 Tape & Reel
(Pb--Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010
1
October, 2010 -- Rev. 5
Publication Order Number:
MMSD301T1/D
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