HMC-ABH209 Просмотр технического описания (PDF) - Analog Devices

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HMC-ABH209

GAAS HEMT MMIC MEDIUM POWER AMPLIFIER, 55 - 65 GHz

Analog Devices 

v03.0714

HMC-ABH209

GAAS HEMT MMIC MEDIUM POWER

AMPLIFIER, 55 - 65 GHz

Absolute Maximum Ratings

Drain Bias Voltage

Gain Bias Voltage

RF Input Power

Storage Temperature

Chennel Temperature

+5.5 Vdc

-1 to +0.3 Vdc

10 dBm

-65 °C to + 150 °C

+180 °C

Outline Drawing

ELECTROSTATIC SENSITIVE DEVICE

OBSERVE HANDLING PRECAUTIONS

Die Packaging Information [1]

Standard

Alternate

GP-2 (Gel Pack)

[2]

[1] Refer to the “Packaging Information” section for die

packaging dimensions.

[2] For alternate packaging information contact Hittite

Microwave Corporation.

NOTES:

1. ALL DIMENSIONS ARE IN INCHES [MM].

2. TYPICAL BOND PAD IS .004” SQUARE.

3. BACKSIDE METALLIZATION: GOLD.

4. BACKSIDE METAL IS GROUND.

5. BOND PAD METALLIZATION: GOLD.

6. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.

7. OVERALL DIE SIZE ±.002”

3

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