ADP1879 Просмотр технического описания (PDF) - Analog Devices
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производитель
ADP1879 Datasheet PDF : 40 Pages
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ADP1878/ADP1879
Data Sheet
Parameter
ADP1878ACPZ-0.6-R7/
ADP1879ACPZ-0.6-R7
On Time
Minimum On Time
Minimum Off Time
ADP1878ACPZ-1.0-R7/
ADP1879ACPZ-1.0-R7
On Time
Minimum On Time
Minimum Off Time
OUTPUT DRIVER CHARACTERISTICS
High-Side Driver
Output Source Resistance
Output Sink Resistance
Rise Time2
Fall Time2
Low-Side Driver
Output Source Resistance
Output Sink Resistance
Rise Time2
Fall Time2
Propagation Delays
DRVL Fall to DRVH Rise2
DRVH Fall to DRVL Rise2
SW Leakage Current
Integrated Rectifier
Channel Impedance
PRECISION ENABLE THRESHOLD
Logic High Level
Enable Hysteresis
COMP VOLTAGE
COMP Clamp Low Voltage
COMP Clamp High Voltage
COMP Zero Current Threshold
THERMAL SHUTDOWN
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
CURRENT LIMIT
Hiccup Current-Limit Timing
OVERVOLTAGE AND POWER-
GOOD THRESHOLDS
FB Power-Good Threshold
FB Power-Good Hysteresis
FB Overvoltage Threshold
FB Overvoltage Hysteresis
PGOOD Low Voltage During Sink
PGOOD Leakage Current
Symbol Test Conditions/Comments
VIN = 5 V, VOUT = 2 V, TJ = 25°C
VIN = 20 V, VOUT = 0.8 V
65% duty cycle (maximum)
VIN = 5 V, VOUT = 2 V, TJ = 25°C
VIN = 20 V
45% duty cycle (maximum)
tr, DRVH
tf, DRVH
ISOURCE = 1.5 A, 100 ns, positive pulse (0 V to 5 V)
ISINK = 1.5 A, 100 ns, negative pulse (5 V to 0 V)
BST − SW = 4.4 V, CIN = 4.3 nF (see Figure 59)
BST − SW = 4.4 V, CIN = 4.3 nF (see Figure 60)
tr,DRVL
tf,DRVL
ISOURCE = 1.5 A, 100 ns, positive pulse (0 V to 5 V)
ISINK = 1.5 A, 100 ns, negative pulse (5 V to 0 V)
VREG = 5.0 V, CIN = 4.3 nF (see Figure 60)
VREG = 5.0 V, CIN = 4.3 nF (see Figure 59)
ttpdhDRVH
ttpdhDRVL
ISWLEAK
BST − SW = 4.4 V (see Figure 59)
BST − SW = 4.4 V (see Figure 60)
BST = 25 V, SW = 20 V, VREG = 5 V
ISINK = 10 mA
VIN = 2.9 V to 20 V, VREG = 2.75 V to 5.5 V
VIN = 2.9 V to 20 V, VREG = 2.75 V to 5.5 V
VCOMP(LOW)
VCOMP(HIGH)
VCOMP_ZCT
TTMSD
Tie EN pin to VREG to enable device
(2.75 V ≤ VREG ≤ 5.5 V)
(2.75 V ≤ VREG ≤ 5.5 V)
(2.75 V ≤ VREG ≤ 5.5 V)
Rising temperature
COMP = 2.4 V
PGOOD
FBPGD
VFB rising during system power up
FBOV
VFB rising during overvoltage event, IPGOOD = 1 mA
VPGOOD
IPGOOD = 1 mA
PGOOD = 5 V
Min Typ Max Unit
600
kHz
500 540 605 ns
82 110 ns
340 400 ns
1.0
MHz
285 312 360 ns
52 85 ns
340 400 ns
2.20 3
Ω
0.72 1
Ω
25
ns
11
ns
1.5 2.2 Ω
0.7 1
Ω
18
ns
16
ns
15.7
ns
16
ns
110 µA
22.3
Ω
605 634 663 mV
31
mV
0.47
V
2.55 V
1.10
V
155
°C
15
°C
6
ms
542 566 mV
34 55 mV
691 710 mV
35 55 mV
143 200 mV
1
100 nA
1 The maximum specified values are with the closed loop measured at 10% to 90% time points (see Figure 59 and Figure 60), CGATE = 4.3 nF, and the high- and low-side
MOSFETs being Infineon BSC042N03MS G.
2 Not automatic test equipment (ATE) tested.
Rev. B | Page 4 of 40
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