BD331 Просмотр технического описания (PDF) - Inchange Semiconductor
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BD331 Datasheet PDF : 2 Pages
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isc Silicon NPN Power Transistor
INCHANGE Semiconductor
BD331
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 3A; VCE= 3V
VCB= 60V; IE= 0
VCB= 60V; IE= 0,TC=150℃
VEB= 5V; IC= 0
hFE-1*
DC Current Gain
IC= 0.5A; VCE= 3V
hFE-2*
DC Current Gain
IC= 3A; VCE=3V
hFE-3*
DC Current Gain
IC= 6A; VCE= 3V
*:Measured under pulse conditions:tp<300us,σ<2%
MIN TYP. MAX UNIT
60
V
2.0
V
2.5
V
0.1
1.0
mA
5
mA
1900
750
3000
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