1N4448TAP Просмотр технического описания (PDF) - Vishay Semiconductors
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1N4448TAP Datasheet PDF : 4 Pages
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www.vishay.com
1N4448
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Rectification efficiency
Reverse recovery time
IF = 5 mA
IF = 100 mA
VR = 20 V
VR = 20 V, Tj = 150 °C
VR = 75 V
IR = 100 μA, tp/T = 0.01,
tp = 0.3 ms
VR = 0, f = 1 MHz, VHF = 50 mV
VHF = 2 V, f = 100 MHz
IF = IR = 10 mA, iR = 1 mA
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
VF
VF
IR
IR
IR
V(BR)
CD
ηr
trr
trr
0.620
100
45
MAX.
0.720
1
25
50
5
4
8
4
UNIT
V
V
nA
μA
μA
V
pF
%
ns
ns
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1.2
1000
1.0
IF = 100 mA
0.8
10 mA
0.6
1 mA
0.4
0.1 mA
0.2
Tj = 25 °C
100
Scattering Limit
10
0
- 30
0
30
60 90 120
94 9169
Tj - Junction Temperature (°C)
1
1
94 9098
10
100
VR- Reverse Voltage (V)
Fig. 1 - Forward Voltage vs. Junction Temperature
Fig. 3 - Reverse Current vs. Reverse Voltage
1000
100
1N4448
10
Scattering Limit
1
0.1
0
94 9171
Tj = 25 °C
0.4 0.8 1.2 1.6 2.0
VF - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
Rev. 1.3, 07-Jul-17
2
Document Number: 81858
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