ADN2882XCHIPS-WP Просмотр технического описания (PDF) - Analog Devices
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ADN2882XCHIPS-WP Datasheet PDF : 10 Pages
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Preliminary Technical Data
ELECTRICAL SPECIFICATIONS
Table 1.
Parameter
Conditions1
DYNAMIC PERFORMANCE
Bandwidth (BW)2
Total Input RMS Noise (IRMS)2
Small Signal Transimpedance (ZT)
Low Frequency Cutoff
Output Return Loss
Input Overload Current3
−3 dB
DC to 4.0 GHz
100MHz
IIN = 10µA
IIN = 500µA
DC to 4.25GHz, differential
Pavg
Maximum Output Swing
Output Data Transition Time
PSRR
Group Delay Variation
Transimpedance Ripple
Total Jitter
Deterministic Jitter
Linear Output Range
pk-pk diff, IIN,PK- PK = 2.0 mA
20% to 80% rise/fall time IIN,PK- PK = 2.5 mA
<10 MHz
50 MHz to 1.0 GHz
50 MHz to 1.0 GHz
10 µA < IIN,PK- PK ≤ 100 µA
100 µA < IIN,PK- PK ≤ 2.0 µA
10 µA < IIN,PK- PK ≤ 100 µA
100 µA < IIN,PK- PK ≤ 2.0 µA
Pk-pk, < 1dB compression
DC PERFORMANCE
Power Dissipation
Input Voltage
Output Common Mode Voltage
Output Impedance
PD FILTER Resistance
PD FILTER Capacitance
RSSI Sensitivity
RSSI Offset
IIN,AVE = 0
DC terminated to VCC
Single-ended
RF
CF
IIN, AVE = 0 uA to 1 mA
IIN, AVE = 0 uA
Min
3.3
2800
TBD
180
50
ADN2882
Typ
Max
Unit
3.8
GHz
520
TBD
nA
3800
4800
V/A
15
kHz
TBD
kHz
−20
−12
dB
3.25
dBm
250
350
mV
40
ps
−40
dB
TBD
ps
TBD
dB
TBD
TBD
ps
TBD
TBD
ps
2
ps
4
Ps
TBD
mV
75
120
0.85
Vcc − 0.12
50
200
20
0.8
TBD
mW
V
V
Ω
Ω
pF
V/mA
mV
1 Min/Max VCC = +3.3 V ± 0.3 V, Ta = −40°C to +95°C; Typ VCC = 3.3 V, Ta = +25C.
2 Photodiode capacitance CD = 0.5pF ± 0.15pF, photodiode resistance = 5 Ω . Load impedance = 50Ω (each output, ac-coupled).
3 10–10 BER, 10 dB ER,
Rev. PrD Nov. 04 2004 | Page 3 of 10
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