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2SK2957L

N-Channel 30-V (D-S) MOSFET

Unspecified 

2SK2957L

N-Channel 30-V (D-S) MOSFET

www.VBsemi.tw

PRODUCT SUMMARY

VDS (V)

RDS(on) (Ω)

0.07 at VGS = 10 V

30

0.09 at VGS= 4.5 V

ID (A)

53

48

Qg (Typ.)

19 nC

TO-251

D

FEATURES

• Halogen-free

• TrenchFET® Gen III Power MOSFET

• 100 % Rg Tested

• 100 % UIS Tested

APPLICATIONS

• DC/DC Conversion

- System Power

RoHS

COMPLIANT

G

GDS

Top View

S

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current (TJ = 150 °C)

Pulsed Drain Current

Avalanche Current

Avalanche Energy

Continuous Source-Drain Diode Current

Maximum Power Dissipation

VDS

VGS

TC = 25 °C

TC = 70 °C

TA = 25 °C

ID

TA = 70 °C

IDM

L = 0.1 mH

IAS

EAS

TC = 25 °C

TA = 25 °C

IS

TC = 25 °C

TC = 70 °C

TA = 25 °C

PD

TA = 70 °C

Operating Junction and Storage Temperature Range

TJ, Tstg

Soldering Recommendations (Peak Temperature)

Limit

30

± 20

53

41

14b, c

10 b, c

165

25

40

15

2.9b, c

28

18

3.5b, c

2.2b, c

- 55 to 150

260

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient

Maximum Junction-to-Case (Drain)

t ≤ 10 s

Steady State

Notes:

a. Based on TC = 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

Symbol

RthJA

RthJC

Typical

29

3.6

Maximum

36

4.5

Unit

V

A

mJ

A

W

°C

Unit

°C/W

E-mail：China@VBsemi TEL:86-755-83251052

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