NSVBAS21TMR6T2G Просмотр технического описания (PDF) - ON Semiconductor

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NSVBAS21TMR6T2G

High Voltage Switching Diode

ON Semiconductor 

BAS21TMR6

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

Reverse Voltage Leakage Current

(VR = 200 Vdc)

(VR = 200 Vdc, TJ = 150°C)

IR

mAdc

−

0.1

−

100

Reverse Breakdown Voltage (IBR = 100 mAdc)

V(BR)

250

−

Vdc

Forward Voltage

(IF = 100 mAdc)

(IF = 200 mAdc)

VF

Vdc

−

1.0

−

1.25

Diode Capacitance (VR = 0, f = 1.0 MHz)

CD

−

5.0

pF

Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100)

trr

−

50

ns

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

820 W

+10 V

2.0 k

100 mH IF

0.1 mF

0.1 mF

tr

tp

t

IF

10%

trr

t

50 W OUTPUT

PULSE

GENERATOR

D.U.T.

50 W INPUT

SAMPLING

VR

OSCILLOSCOPE

90%

INPUT SIGNAL

IR(REC) = 3.0 mA

IR

OUTPUT PULSE

(IF = IR = 30 mA; MEASURED

at IR(REC) = 3.0 mA)

Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.

Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.

Notes: 3. tp » trr

Figure 1. Recovery Time Equivalent Test Circuit

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