2SC2274 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

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2SC2274

TO-92 Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors

2SC2274 TRANSISTOR (NPN)

FEATURES

z High Breakdown Voltage

z High Current

z Low Saturation Voltage

TO – 92

1. EMITTER

2. COLLECTOR

3. BASE

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

60

50

5

0.5

600

208

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector output capacitance

Transition frequency

*Pulse test

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

hFE(2) *

VCE(sat)

VBE (sat)

Cob

fT

Test conditions

IC= 0.01mA,IE=0

IC=1mA,IB=0

IE=0.01mA,IC=0

VCB=40V,IE=0

VEB=4V,IC=0

VCE=5V, IC=50mA

VCE=5V, IC=400mA

IC=400mA,IB=40mA

IC=400mA,IB=40mA

VCB=10V, f=1MHz

VCE=10V,IC=10mA

Min Typ Max Unit

60

V

50

V

5

V

1

μA

1

μA

60

320

35

0.6

V

1.2

V

5

pF

120

MHz

CLASSIFICATION OF hFE(1)

RANK

D

RANGE

60-120

E

100-200

F

160-320

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