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SMZ10B Просмотр технического описания (PDF) - Diotec Semiconductor Germany

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SMZ10B Datasheet PDF : 3 Pages
1 2 3
SMZ10B ... SMZ200B (2 W, 2%)
120
[%]
100
80
60
40
20
Ptot
0
0 TA 50
100
150 [°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
102
[A]
10
Tj = 125°C
Tj = 25°C
1
10-1
IF
10-2
30a-(1a-1.1v)
0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8
Forward characteristics (typical values)
Durchlasskennlinien (typische Werte)
[pF]
VR = 0V
VR = 4V
Tj = 25°C
f = 1.0 MHz
VR = 20V
VR = 40V
Cj
VZ
[V]
Junction capacitance vs. zener voltage (typical)
Sperrschichtkapazität in Abh. v.d. Zenerspg. (typ.)
10
18 24 30 36 43
51 56 62 68 75 82
91 100
IZmax
Tj = 25°C
I ZT
Typical breakdown characteristic – tested with pulses
Typische Abbruchspannung – gemessen mit Impulsen
© Diotec Semiconductor AG
http://www.diotec.com/
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