GL41A Просмотр технического описания (PDF) - Diode Semiconductor Korea
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GL41A Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
GL41A- - -GL41Y
FIG.1 -- FORWARD DERATING CURVE
1.2
Resistive or
inductive Load
1.0
0.8
0.6
0.4
0.2X0.2(5.0X5.0mm)
THICK COPPERPAND
AREAS
0.2
0
0 25 50 75 100 125 150 175 200
AMBIENT TEMPERATURE
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
GL41A--GL41J
Y
GL41K--GL41Y
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
60
f=1MHz
40
TJ=25
20
10
4
2
1
.1 .2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE,VOLTS
FIG.2 PEAK FORWARD SURGE CURRENT
50
40
30
TJ=TJmax
8.3ms Single Half
Sine-Wave
20
10
0
1
10
100
NUMBER OF CYCLES AT 60Hz
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
1000
100
10
1
0.1
0.01
0
TJ=125OC
TJ=75 OC
TJ=25OC
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,
FIG.6-TRANSIENT THERMAL IMPEDANCE
100
10
1
0.1
0.01
UNITS MOUNTED on
0.20x0.20''(5.0X5.0mm)X0.5mil
INCHES(0.013mm)
THICK COPPERLAND AREAS
0.1
1
10
100
PULSE DURATION,SEC
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