2SK3018WT1 Просмотр технического описания (PDF) - Unspecified
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2SK3018WT1 Datasheet PDF : 8 Pages
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2SK3018WT1
SPECIFICATIONS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 10 µA
Gate-Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 0 V, VGS = ± 15 V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = ± 10 V
VDS = 0 V, VGS = ± 10 V, TJ = 85 °C
VDS = 0 V, VGS = ± 5 V
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
VDS = 60 V, VGS = 0 V , TJ = 125 °C
On-State Drain Currenta
ID(on)
VGS = 10 V, VDS = 7.5 V
VGS = 4.5 V, VDS = 10 V
Drain-Source On-Resistancea
RDS(on)
VGS = 10 V, ID = 500 mA
VGS = 4.5 V, ID = 200 mA
Forward Transconductancea
gfs
VDS = 10 V, ID = 200 mA
Diode Forward Voltage
VSD
IS = 200 mA, VGS = 0 V
Dynamica
Total Gate Charge
Qg
VDS = 10 V, VGS = 4.5 V
ID ≅ 250 mA
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS = 25 V, VGS = 0 V
f = 1 MHz
Switchinga, b, c
Turn-On Time
Turn-Off Time
td(on)
td(off)
VDD = 30 V, RL = 150 Ω
ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
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Limits
Min. Typ.a Max. Unit
60
V
1
2.5
± 10
µA
1
± 150 nA
± 1000
± 100
1
µA
500
800
mA
500
2
Ω
4
100
mS
1.3
V
0.4
0.6
nC
30
6
pF
2.5
25
ns
35
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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