2SD856 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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Компоненты Описание

производитель

2SD856

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 60V(Min)

·Good Linearity of hFE

·Wide Area of Safe Operation

·Complement to Type 2SB761

APPLICATIONS

·Designed for AF power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

60

V

VCEO

Collector-Emitter Voltage

60

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

3

A

ICM

Collector Current-Peak

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

5

A

35

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

2SD856

SPTECH website：www.superic-tech.com

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