2SD1313 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2SD1313 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
2SD1313
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
350
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 15A; IB= 3A
1.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 15A; IB= 3A
1.7
V
ICBO
Collector Cutoff Current
VCB= 800V; IE= 0
1
mA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
1
mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
15
hFE-2
DC Current Gain
IC= 25A; VCE= 5V
6
COB
Output Capacitance
IE=0; VCB= 50V; ftest= 1MHz
170
pF
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 10V
6
MHz
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= 15A; IB1= IB2= 3A;
RL= 13.3Ω; VCC≈ 200V
PW=20μs; Duty Cycle≤1%
0.8
μs
3.0
μs
0.5
μs
SPTECH website：www.superic-tech.com
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