D5SBA60 Просмотр технического описания (PDF) - New Jersey Semiconductor
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D5SBA60 Datasheet PDF : 2 Pages
| |||
lziiE.ii
£s
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
D5SBA10 ~ D5SBA60
, Line.
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
SILICON BRIDGE RECTIFIERS
PRV: 100-600 Volts
lo : 6 Amperes
FEATURES:
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Ideal for printed circuit board
* Very good heat dissipation
* Pb / RoHS Free
RBV25
h C3
t V"
30 ±0.3
3.9 ± 0.2
4.9 ±0.2
) U—
>| k—
I 0 3.2 + 0.1
1.0 +0.1
MECHANICAL DATA:
* Case : Reliable low cost construction
utilizing molded plastic technique
* Epoxy : UL94V-0 rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Any
* Weight: 7.7 grams
< -X > < >
10 7.5 7.5
±0.2 ±0.2 ±0.2
2.010.2
0.7 + 0.1
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified.
RATING
Maximum Reverse Voltage
Maximum Average Forward Current
(50Hz Sine wave, R-load)
Maximum Peak Forward Surge Current, Tj = 25 °C
(50Hz sine wave, Non-repetitive 1 cycle peak value)
Current Squared Time at 1ms < t < 10 ms, Tc=25°C
Maximum Forward Voltage per Diode at IF = 3.0 A
Maximum DC Reverse Current, VR=VRM
( Pulse measurement, Rating of per diode)
Maximum Thermal Resistance, Junction to case
Maximum Thermal Resistance, Junction to Ambient
Operating Junction Temperature
Storage Temperature Range
SYMBOL D5SBA10 D5SBA20 D5SBA40 D5SBA60 UNIT
VRM
100 j 200
400
600
V
6 (With heatsink, Tc = 110°C)
IF(AV)
A
2.8 (Without heatsink, Ta = 25°C)
IFSM
120
A
I2t
60
A2S
VF
1.05
V
|R
R9JC
R9JA
TJ
TSTG
10
3.4 (With heatsink)
26 (Without heatsink)
150
- 40 to + 1 50
MA
°c/w
°c/w
°c
°c
Quality Semi-Conductors
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