SSM85T03H Просмотр технического описания (PDF) - Silicon Standard Corp.

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производитель

SSM85T03H

N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Silicon Standard Corp. 

14

I D =30A

12

V DS =15V

10

V DS =20V

V DS =24V

8

6

4

2

0

0

10

20

30

40

50

60

70

Q G , Total Gate Charge (nC)

Fig 7. Gate Charge Characteristics

1000

100

1ms

10ms

10

T c =25 o C

Single Pulse

100ms

DC

1

0.1

1

10

100

V DS , Drain-to-Source Voltage (V)

Fig 9. Maximum Safe Operating Area

SSM85T03H,J

f=1.0MHz

10000

Ciss

1000

Coss

Crss

100

1

6

11

16

21

26

31

V DS ,Drain-to-Source Voltage (V)

Fig 8. Typical Capacitance Characteristics

1

Duty factor=0.5

0.2

0.1

0.1

0.05

0.02

0 01

Single Pulse

PDM

t

T

Duty factor = t/T

Peak Tj = PDM x Rthjc + TC

0.01

0.00001

0.0001

0.001

0.01

0.1

1

10

t , Pulse Width (s)

Fig 10. Effective Transient Thermal Impedance

VDS

90%

10%

VGS

td(on) tr

td(off) tf

VG

4.5V

QGS

QG

QGD

Charge

Q

Fig 11. Switching Time Waveform

Fig 12. Gate Charge Waveform

8/16/2004 Rev.2.1

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