BTW67 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BTW67 Datasheet PDF : 4 Pages
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BTW67 and BTW69 Series
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
Symbol
Test Conditions
Value
Unit
'GT
VD = 12V
RL = 33£1
MIN.
8
MAX.
80
mA
VGT
MAX.
1.3
V
VGD VD = VDRM RL = 3.3k£l
Tj = 125°C
MIN.
0.2
V
'H
'L
dV/dt
IT = 500 mA Gate open
IG = 1.2IGT
V0 = 67 % VDRM Gate open
Tj = 125°C
MAX.
MAX.
MIN.
150
200
1000
mA
mA
V/us
VTM ITM = 100 A tp = 380 us
Tj = 25°C
MAX.
1.9
V
Vto Threshold voltage
Tj = 125°C
MAX.
1.0
V
«d
'DRM
'RRM
Dynamic resistance
VDRM VRRM
Tj = 125°C
MAX.
8.5
mil
Tj = 25°C
MAX.
10
UA
Tj = 125°C
5
mA
THERMAL RESISTANCES
Symbol
Rth(j-c)
Junction to case(DC)
Rth(j-a) Junction to ambient
Parameter
RD91 (Insulated)
TOPS Insulated
TOP3 Insulated
Value
1.0
0.9
50
Unit
°C/W
°c/w
PRODUCT SELECTOR
Part Number
BTW67-xxx
BTW69-xxx
600V
X
X
Voltage (xxx)
800V
X
X
1200V
X
X
Sensitivity
80 mA
80 mA
Package
RD91
TOP3 Ins.
ORDERING INFORMATION
BTW 69 - 600
STANDARD
SCR ^ '" "
SERIES
^r
TYPE:
67: 50A in RD91
69: 50A inTOP3
600: 600V
800: 800V
1200: 1200V
OTHER INFORMATION
Part Number
Marking
BTW67-XXX
BTW69-xxx
BTW67xxx
BTW69xxx
Note: xxx = voltage
Weight
20.0 g
4.5g
Base Quantity
25
120
Packing mode
Bulk
Bulk
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