2N7002K Просмотр технического описания (PDF) - STANSON TECHNOLOGY

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производитель

2N7002K

N Channel Enhancement Mode MOSFET

STANSON TECHNOLOGY 

2N7002K

N Channel Enhancement Mode MOSFET

500mA

ELECTRICAL CHARACTERISTICS ( Ta = 25℃ Unless otherwise noted )

Parameter

Static

Drain-Source Breakdown

Voltage

Gate Threshold Voltage

Gate Leakage Current

Zero Gate Voltage Drain

Current

Symbol

Condition

Min Typ Max Unit

V(BR)DSS VGS=0V,ID= 250uA

60

VGS(th) VDS=VGS,ID= 250uA 0.8

IGSS

IDSS

VDS=0V,VGS=±20V

VDS= 60V,VGS=0V

VDS= 48V,VGS=0V

TJ=70℃

V

2.5 V

±30 nA

1

100 uA

Drain-source On-Resistance

RDS(on)

VGS=10.0V,ID=0.50A

VGS=4.5V,ID= 0.25A

2.0 3.0

3.0 3.5

Ω

Forward Transconductance

Gfs(1)

Diode Forward Voltage

Dynamic

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

VSD(1)

Qg

Qgs

Qgd

Ciss

Coss

Crss

Turn-On Time

td(on)

tr

Turn-Off Time

td(off)

tf

VDS=10V,ID= 0.5A

IS=0.12A,VGS=0V

VDS=30V, VGS=4.5V

ID≡1.0A

VDS=25V, f=1MHz,

VGS=0

VDD=30V

ID=0.5A

VGS=4.5V

RG=4.7Ω

0.08

S

1.3 V

0.6 0.8

0.2

nC

0.2

30 50

7

pF

4

2

15

nS

8

11

3

120 Bentley Square, Mountain View, Ca 94040 USA

www.stansontech.com

2N7002K 2013. V2

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