2N7002K Просмотр технического описания (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.
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2N7002K Datasheet PDF : 5 Pages
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2N7002K Typical Characteristics
102
03aa46
Plastic-Encapsulate Mosfets
C
(pF)
10
Ciss
Coss
Crss
1
10-1
1
10
102
VDS (V)
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
0.5
IS VGS = 0 V
(A)
0.4
0.3
03an73
15
VGS
(V)
10
ID = 0.5A
VDD = 48 V
Tj = 25 °C
03ab09
0.2
5
0.1
150 °C
Tj = 25 °C
0
0
0.3
0.6
0.9
1.2
VSD (V)
0
0
0.3
0.6
0.9 QG (nC) 1.2
Tj = 25 °C and 150 °C; VGS = 0 V
Fig 12. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
ID = 0.5 A; VDD = 48 V
Fig 13. Gate-source voltage as a function of gate
charge; typical values.
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
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