2N7002KWT1 Просмотр технического описания (PDF) - Willas Electronic Corp.

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производитель

2N7002KWT1

380mA N-channel Small Signal MOSFET - 60V

Willas Electronic Corp. 

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SOT-ϯ23

Package

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ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Test Condition

Min

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

60

Drain−to−Source Breakdown Voltage

Temperature Coefficient

V(BR)DSS/TJ

Zero Gate Voltage Drain Current

IDSS

VGS = 0 V,

VDS = 60 V

TJ = 25°C

TJ = 125°C

VGS = 0 V,

VDS = 50 V

TJ = 25°C

Gate−to−Source Leakage Current

IGSS

VDS = 0 V, VGS = ±20 V

ON CHARACTERISTICS (Note 2)

Gate Threshold Voltage

y Negative Threshold Temperature

Coefficient

r Drain−to−Source On Resistance

VGS(TH)

VGS(TH)/TJ

RDS(on)

a Forward Transconductance

gFS

in CHARGES AND CAPACITANCES

Input Capacitance

CISS

Output Capacitance

COSS

lim Reverse Transfer Capacitance

CRSS

Total Gate Charge

QG(TOT)

Threshold Gate Charge

QG(TH)

e Gate−to−Source Charge

QGS

Gate−to−Drain Charge

QGD

r SWITCHING CHARACTERISTICS, VGS = V (Note 3)

P Turn−On Delay Time

td(ON)

VGS = VDS, ID = 250 mA

1.2

VGS = 10 V, ID = 500 mA

VGS = 5.0 V, ID = 50 mA

VDS = 5 V, ID = 200 mA

VGS = 0 V, f = 1 MHz,

VDS = 25 V

VGS = 4.5 V, VDS = 10 V;

ID = 500 mA

Rise Time

Turn−Off Delay Time

tr

td(OFF)

VDS = 10 V, VGEN = 10 V,

ID = 500 mA

Fall Time

tf

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

VSD

VGS = 0 V,

IS = 115 mA

2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%

3. Switching characteristics are independent of operating junction temperatures

TJ = 25°C

TJ = 85°C

Typ Max

71

1

500

100

±10

2

4.0

2.3

2.7

80

34

3

2.2

0.71

0.1

0.32

0.16

3.8

3.4

19

12

1.2

0.7

Units

V

mV/°C

mA

nA

mA

V

mV/°C

W

mS

pF

nC

ns

V

2014.08

www.willas.com.tw

Rev. 

第2頁

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