2N7002KW Просмотр технического описания (PDF) - Formosa Technology
Номер в каталоге
Компоненты Описание
производитель
2N7002KW Datasheet PDF : 8 Pages
| |||
N-Channel SMD MOSFET ESD Protection
2N7002KW
60V N-Channel Enhancement
Mode MOSFET - ESD Protection
Formosa MS
Features
• RDS(ON) =3.0Ω, VGS=10V, @60V/0.50A
• RDS(ON) =4.0Ω, VGS=4.5V, @60V/0.20A
• ESD production 2kV (Human body mode)
• Advanced trench process technology.
• High density cell design for ultra low on-resistance.
• Specially designed for battery operated system,
solid-state relays drivers, relays, displays, lamps,
solenoids, memories, etc.
• In compliance with EU RoHS 2002/95/EC directives.
• Suffix "-H" indicates Halogen-free part, ex. 2N7002ΚW-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant
• Case : Molded plastic, SOT-323
• Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026
• Mounting Position : Any
• Weight : Approximated 0.006 gram
Package outline
SOT-323
(B)
(C)
(A)
0.054 (1.35)
0.046 (1.15)
0.096 (2.40)
0.080 (2.00)
0.017 (0.42)Min.
0.040 (1.00)
0.032 (0.80)
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
Drain-source voltage
Drain-gate voltage(GRS = 1.0MΩ)
Drain to current-continue
-pulsed
Gate to source voltage-continue
Total power dissipation
Derate above 25OC
Operation junction temperature range
Derate above 75OC
Storage temperature range
Thermal resistance junction to ambient
Symbol
VDSS
VDGR
ID
IDM
VGS
PD
TJ
TSTG
RθJA
MIN.
-55
-55
TYP.
625
MAX.
60
60
±115
800
±20
200
120
+150
+150
UNIT
V
V
mA
V
mW
o
C
o
C
o
C/W
http://www.formosams.com/
TEL:886-2-22696661
FAX:886-2-22696141
Page 2
Document ID Issued Date
DS-251127 2009/07/10
Revised Date Revision
2012/02/02
B
Page.
8
Share Link: 