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Компоненты Описание
2N7002KW Просмотр технического описания (PDF) - PANJIT INTERNATIONAL
Номер в каталоге
Компоненты Описание
производитель
2N7002KW
60V N-Channel Enhancement Mode MOSFET - ESD Protected
PANJIT INTERNATIONAL
2N7002KW Datasheet PDF : 5 Pages
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5
2N7002KW
ELECTRICAL CHARACTERISTICS
Parameter
Static
Drain-Source Breakdown
Voltage
Gate Threshold Voltage
Drain-Source On-State
Re s i s ta nc e
Drain-Source On-State
Re s i s ta nc e
Zero Gate Voltage Drain
C urrent
Gate Body Leakage
Forward Transconductance
Dynamic
To ta l Ga te C ha r g e
Tur n- On D e la y Ti me
Tur n- Off D e la y Ti me
Input C apaci tance
Output Capacitance
Re ve rse Tra ns fe r
C a p a c i ta nce
Source-Drain Diode
Diode Forward Voltage
C ontinuous Diode Forward
C urrent
Pulsed Diode Forward
C urrent
S ym b o l
Te s t C o nd i ti o n
B V
DSS
V
GS(th)
R
D S (o n)
R
D S (o n)
I
DSS
I
GSS
g
fS
V
GS
=0 V, I
D
=1 0 uA
V
DS
=V
GS
, I
D
=2 5 0 uA
V
GS
=4.5V, I
D
=200mA
V =10V, I =500mA
GS
D
V
DS
=60V, V
GS
=0V
V
GS
=+20V, V
DS
=0V
V
DS
=1 5 V, I
D
=2 5 0 mA
Q
g
t
on
t
off
C
iss
C
oss
C
rss
V
DS
=1 5 V, I
D
=2 0 0 mA
V
GS
=4.5V
V
DD
=30V , R
L
=150
Ω
I
D
=200mA , V
GEN
=10V
R
G
=10
Ω
V =25V, V =0V
DS
GS
f=1.0MH
Z
V
I =200mA , V =0V
SD
S
GS
I
s
-
I
sM
-
Mi n.
60
1
-
-
-
-
100
-
-
-
-
-
-
-
-
-
Typ .
-
-
-
-
-
-
-
-
-
-
-
-
-
0.82
-
-
Max. Units
-
V
2.5
V
4.0
Ω
3.0
1
uA
+10
uA
-
mS
0.8
nC
20
ns
40
35
10
pF
5
1.3
V
115
mA
800
mA
Switching
V
DD
Test Circuit
V
IN
R
L
Gate Charge
V
DD
Test Circuit
V
GS
R
L
V
OUT
R
G
1mA
R
G
May 21.2010-REV.01
PAGE . 2
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