2N7002KW Просмотр технического описания (PDF) - SEC Electronics Inc.
Номер в каталоге
Компоненты Описание
производитель
2N7002KW Datasheet PDF : 4 Pages
| |||
Elektronische Bauelemente
2N7002KW
115mA , 60V, RDS(ON) 4
N-Ch Small Signal MOSFET with ESD Protection
N-CHANNEL ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ.2 Max. Unit
Test Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Drain-Source On-Resistance
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward Transconductance
BVDSS
60
-
-
V VGS=0, ID=10μA
VGS(th)
1
-
2.5
VDS= VGS, ID=250μA
-
RDS(ON)
-
4
Ω VGS=4.5V, ID=200mA
-
-
3
VGS=10V, ID=500mA
IDSS
-
-
1
μA VDS=60V, VGS=0
IGSS
-
-
±10
μA VDS=0, VGS= ±20V
gfs
100
-
-
mS VDS=15V, ID=250mA
Dynamic
Total Gate Charge
Qg
-
-
0.8
nC VDS=15V, VGS=4.5V, ID=200mA
Turn-On Time
Turn-Off Time
t(on)
-
-
20
VDD=30V, RL=150Ω,
nS ID=200mA, VGEN=10V,
t(off
-
-
40
RG=10Ω
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Forward Voltage
Continuous Diode Forward Current
Pulse Diode Forward Current
Ciss
-
-
35
Coss
-
-
10
Crss
-
-
5
Source-Drain Diode
VSD
-
0.82 1.3
IS
-
-
115
ISM
-
-
800
pF VDS=25V, VGS=0V, f=1MHz
V IS=200mA, VGS=0V
mA
mA
http://www.SeCoSGmbH.com/
31-Mar-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 4
Share Link: 