2N7002KW Просмотр технического описания (PDF) - Unisonic Technologies
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2N7002KW Datasheet PDF : 6 Pages
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2N7002KW
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
Drain Current
Continuous
Pulse(Note 2)
VGSS
ID
±20
V
300
800
mA
Power Dissipation
Derating above TA=25°C
Junction Temperature
PD
200
mW
1.6
mW/°C
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified.)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS VGS=0V, ID=10µA
60
Drain-Source Leakage Current
IDSS
VDS=60V, VGS=0V
Gate-Source Leakage Current
IGSS
VDS=0V, VGS=±20V
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note)
VGS(TH)
RDS(ON)
VDS=10V, ID=1mA
VGS=10V, ID=300mA
VGS=4.5V, ID=200mA
1.0 1.85
DYNAMIC PARAMETERS
Input Capacitance
Output Capacitance
CISS
COSS
VDS=25V, VGS=0V, f=1.0MHz
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Turn-ON Delay Time
Turn-OFF Delay Time
tD(ON) ID=0.2 A, VDD=30V, VGS=10V,
12
tD(OFF) RL=150Ω, RG=10Ω
20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Maximum Continuous Drain-Source Diode
Forward Current
IS
Maximum Pulsed Drain-Source Diode
Forward Current
ISM
Drain-Source Diode Forward Voltage
VSD
VGS=0V, Is=300mA (Note )
0.88
Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size.
2. Pulse width≦300μs, Duty cycle≦1%
MAX UNIT
V
1.0 µA
±10 µA
2.5 V
2.0 Ω
4.0 Ω
50 pF
25 pF
5.0 pF
20 ns
30 ns
300 mA
0.8 A
1.5 V
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R209-033.B
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