2N7002KW Просмотр технического описания (PDF) - Micro Commercial Components

Номер в каталоге

Компоненты Описание

производитель

2N7002KW

N-Channel Enhancement Mode Field Effect Transistor

Micro Commercial Components 

2N7002KW

MCC

R

Micro Commercial Components

MOSFET ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test Condition

Min Typ

Static Characteristics

Drain-Source Breakdown Voltage

VDS

VGS = 0V, ID =250µA

60

Gate Threshold Voltage*

VGS(th) VDS =VGS, ID =1mA

1

Zero Gate Voltage Drain Current

IDSS

VDS =48V,VGS = 0V

Gate –Source leakage current

IGSS

VGS =±20V, VDS = 0V

Drain-Source On-Resistance*

RDS(on)

VGS = 4.5V, ID =200mA

VGS =10V,ID =500mA

Diode Forward Voltage

VSD

VGS=0V, IS=300mA

Recovered charge

Qr

VGS=0V,IS=300mA,VR=25V,

dls/dt=-100A/µs

30

Dynamic Characteristics**

Input Capacitance

Output Capacitance

Ciss

Coss

VDS =10V,VGS =0V,f =1MHz

Reverse Transfer Capacitance

Switching Characteristics**

Turn-On Delay Time

Turn-Off Delay Time

Crss

td(on)

td(off)

VGS=10V,VDD=50V,RG=50Ω,

RGS=50Ω, RL=250Ω

Reverse recovery Time

trr

VGS=0V,IS=300mA,VR=25V,

dls/dt=-100A/µs

30

GATE-SOURCE ZENER DIODE

Gate-Source Breakdown Voltage BVGSO Igs=±1mA (Open Drain)

Notes:

*Pulse Test : Pulse Width ≤300µs, Duty Cycle ≤2%.

**These parameters have no way to verify.

±21.5

Max Units

V

2.5

V

1

µA

±10 µA

5.3

Ω

5

Ω

1.5

V

nC

40 pF

30

pF

10

pF

10

ns

15

ns

ns

±30

V

Revision: E

www.mccsemi.com

2 of 3

2017/10/30

Share Link: