2SD1616A Просмотр технического описания (PDF) - SHENZHEN YONGERJIA INDUSTRY CO.,LTD
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2SD1616A Datasheet PDF : 1 Pages
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RoHS
2SD1616A
2SD1616A TRANSISTOR (NPN)
TO-92
FEATURE
D Power dissipation
T PCM:
0.75 W (Tamb=25℃)
.,L Collector current
ICM:
Collector-base voltage
1A
V(BR)CBO:
120 V
O Operating and storage junction temperature range
C TJ, Tstg: -55℃ to +150℃
1. EMITTER
2. COLLECTOR
3. BSAE
123
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
IC Parameter
Collector-base breakdown voltage
N Collector-emitter breakdown voltage
O Emitter-base breakdown voltage
R Collector cut-off current
Emitter cut-off current
T DC current gain
EC Collector-emitter saturation voltage *
Base-emitter saturation voltage *
L Base-emitter voltage *
E Transition frequency
Output capacitance
J Turn on time
EStorage time
WFall time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
VBE(sat)
VBE
fT
Cob
ton
tS
tF
Test conditions
Ic= 10µA , IE=0
IC= 2 mA , IB=0
IE= 10µA, IC=0
VCB=60V, IE=0
VEB=6V, IC=0
VCE=2 V, IC= 100mA
VCE=2 V, IC= 1A
IC= 1A, IB=50mA
IC= 1A, IB=50mA
VCE= 2V, IC=50mA
VCE=2 V, IC= 100mA
IE= 0, f=1MHz
Vcc=10V, IC=100mA,
IB1=-IB2=10mA
VBE (OFF)=-2~ -3V
MIN
MAX
UNIT
120
V
60
V
6
V
0.1
µA
0.1
µA
135
600
81
0.3
V
1.2
V
0.7
V
100
MHz
25
pF
0.07 typ ms
0.95 typ ms
0.07 typ ms
*pulse test: PW≤350µS, δ≤2%.
CLASSIFICATION OF hFE1
Rank
L
K
U
Range
135-270
200-400
300-600
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com
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