K867 Просмотр технического описания (PDF) - Inchange Semiconductor
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K867 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
2SK867
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage VGS=0; ID= 10mA
VGS(TH) Gate Threshold Voltage
VDS=0; ID= 1mA
RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID=8A
IGSS
Gate Source Leakage Current
VGS= ±20V; VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS=320V; VGS= 0
ton
Turn-on time
toff
Turn-off time
VGS=10V;ID=8A;
RL=19Ω
MIN TYP. MAX UNIT
400
V
1.0
5.0
V
0.3 0.45 Ω
±1 uA
0.1 mA
120
ns
460
ns
isc website：www.iscsemi.cn
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