D2328 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

D2328

Silicon NPN Power Transistor

Inchange Semiconductor 

isc Silicon NPN Power Transistor

INCHANGE Semiconductor

2SD2328

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 1A

VBE(on) Base-Emitter On Voltage

IC= 8A ; VCE= 5V

ICBO

Collector Cutoff Current

VCB= 180V ; IE=0

IEBO

Emitter Cutoff Current

VEB= 5V; IC=0

hFE-1

DC Current Gain

IC= 1A ; VCE= 5V

hFE-2

DC Current Gain

IC= 8A ; VCE= 5V

fT

Current-Gain—Bandwidth Product

IC= 1A ; VCE= 5V

COB

Output Capacitance

IE= 0 ; VCB= 10V, ftest= 1MHz

MIN TYP. MAX UNIT

180

V

3.0

V

1.5

V

5.0 μA

5.0 μA

55

160

35

30

MHz

270

pF

isc website： www.iscsemi.com

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