1N5408GP-Z21D-B Просмотр технического описания (PDF) - Unisonic Technologies
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1N5408GP-Z21D-B Datasheet PDF : 3 Pages
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1N5408G
DIODE
ABSOLUTE MAXIMUM RATINGS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.
PARAMETER
SYMBOL
RATINGS
UNIT
Working Peak Reverse Voltage
VRWM
1000
V
Repetitive Peak Reverse Voltage
VRRM
1000
V
Maximum RMS Reverse Voltage
VRMS
700
V
DC Blocking Voltage
VR
1000
V
Average Rectified Output Current (TA=105°C)
IO
3.0
A
Peak Forward Surge Current 8.3ms Single Half
Sine-Wave Superimposed on Rated Load
IFSM
150
A
Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Junction to Ambient (Note 2)
ELECTRICAL CHARACTERISTICS
SYMBOL
θJA
RATINGS
30
UNIT
°C/W
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz, resistive or inductive load, for capacitive load current derate by 20%.
PARAMETER
SYMBOL TEST CONDITIONS MIN TYP
Instantaneous Forward Voltage
VF
IF=3.0A
DC Reverse Current at Rated DC Blocking
Voltage
IR
TA=25°C
TA=125°C
Junction Capacitance (Note 1)
CJ
50
Notes: 1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
MAX UNIT
1.0 V
2.5 μA
50 μA
pF
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R601-252.I
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