1N3212(2016) Просмотр технического описания (PDF) - GeneSiC Semiconductor, Inc.
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1N3212 Datasheet PDF : 3 Pages
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Silicon Standard
Recovery Diode
Features
• High Surge Capability
• Types from 400 V to 600 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N3212 thru 1N3214R
VRRM = 400 V - 600 V
IF = 15 A
DO-5 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N3212 (R)
1N3213 (R)
Repetitive peak reverse voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
VRRM
VRMS
VDC
IF
IF,SM
Tj
Tstg
TC ≤ 150 °C
TC = 25 °C, tp = 8.3 ms
400
280
400
15
297
-55 to 150
-55 to 150
500
350
500
15
297
-55 to 150
-55 to 150
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3212 (R)
Diode forward voltage
Reverse current
VF
IF = 15 A, Tj = 25 °C
1.5
IR
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 150 °C
10
10
Thermal characteristics
Thermal resistance, junction - ca RthJC
0.65
1N3213 (R)
1.5
10
10
0.65
1N3214 (R)
600
420
600
15
297
-55 to 150
-55 to 150
1N3214 (R)
1.5
10
10
0.65
Unit
V
V
V
A
A
°C
°C
Unit
V
μA
mA
°C/W
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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