2SD428 Просмотр технического описания (PDF) - Inchange Semiconductor

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2SD428

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

2SD428

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 100V(Min)

·High Power Dissipation-

: PC= 60W(Max)@TC=25℃

·Complement to Type 2SB558

APPLICATIONS

·Designed for power amplifier applications.

·Recommended for 40W high-fidelity audio frequency

amplifier output stage.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

100

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

7

A

IE

Emitter Current-Continuous

Collector Power Dissipation

PC

@TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature

-7

A

60

W

150

℃

-65~150 ℃

isc Website：www.iscsemi.cn

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