2SD1088 Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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производитель

2SD1088

Silicon NPN Darlington Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Darlington Power Transistor

2SD1088

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= 250V(Min)

·High DC Current Gain-

: hFE= 2000(Min.)@IC= 2A

·Low Collector-Emitter Saturation Voltage-

: VCE(sat)= 2.0V(Max) @IC= 4A

APPLICATIONS

·Designed for use in high-voltage switching igniter applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

300

V

VCEO

Collector-Emitter Voltage

250

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

6

A

ICM

Collector Current-Peak

10

A

IB

Base Current-Continuous

PC

Collector Power Dissipation

@ TC=25℃

TJ

Junction Temperature

1.0

A

30

W

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX UNIT

4.16 ℃/W

SPTECH website：www.superic-tech.com

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