BUX41N Просмотр технического описания (PDF) - Inchange Semiconductor

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BUX41N

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BUX41N

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA ; IB= 0, L= 25mH

160

V

V(BR)EBO Emitter-Base Breakdown Voltage IE=50mA; IC= 0

7

V

VCE(sat)-1 Collector-Emitter Saturation Voltage IC=8A; IB=0.8A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC=12A; IB=1.5A

VBE(sat) Base-Emitter Saturation Voltage

IC=12A; IB=1.5A

ICEO Collector Cutoff Current

ICEX

Collector Cutoff Current

IEBO Emitter Cutoff Current

VCE=130V; IB= 0

VCE= 220V; VBE= -1.5V

VCE= 220V; VBE= -1.5V; TC= 125℃

VEB= 5V; IC=0

1.2 V

1.6 V

2.0 V

1.0 mA

1.0

mA

5.0

1.0 mA

hFE-1 DC Current Gain

IC= 8A ; VCE= 4V

15

45

hFE-2 DC Current Gain

IC= 12A ; VCE= 4V

8

fT

Current-Gain—Bandwidth Product IC= 1A ; VCE= 15V; f=10MHz

8

MHz

Switching Times; Resistive Laod

ton

Turn-on Time

ts

Storage Time

tf

Fall Time

IC= 12A ;IB1= -IB2= 1.5A;

VCC= 30V;

RB= 3.9Ω; RC= 2.5Ω

1.3 μs

1.5 μs

0.8 μs

isc website：www.iscsemi.cn

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