BUX41N Просмотр технического описания (PDF) - New Jersey Semiconductor
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BUX41N Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s) Min Typ Max Unit
Collector-Emitter Sustaining
VcEO(SUS) Voltage (*)
lc= 200 mA
160 -
VEBO
ICEO
Emitter-Base Voltage
Collector Cutoff Current
lc= 0 A, |E= 50 mA
VCE= 130V, I B = O A
7
-
-
-
VCE= 220 V,VBE= -1.5V -
-
ICEX
IEBO
hFE
VcE(SAT)
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain (*)
Collector-Emitter saturation
Voltage (*)
Vce=220V VBE=-1.5V
Tcase=125°C
VEB= 5.0 V, lc= 0 A
lc= 8 A, VCE= 4.0 V
IC=12A, VCE=4.0V
lc= 8 A, IB= 0.8 A
lc=12A, IB=1-5A
-
-
-
-
15
-
8
-
- 0.5
- 0.75
VBEISAT)
IS/B
Base-Emitter saturation Voltage
n
IC=12A, IB=1.5A
Second breakdown collector VCE=30V,ts = 1s
current
VCE= 100V, t s = 1s
-
1.5
4
-
0.27 -
ES/B
Clamped ES/B Collector current
VC|amp=160V
L= 500 uH
12
-
fr
Transition frequency
VCE=15V, lc=1A
f= 10MHz
8
-
ton
Turn-on time
lc= 12 A, IB= 1-5 A
Vcc= 30 V
- 0.35
-
V
-
V
1 mA
1
mA
5
1 mA
45
-
-
1.2
1.6 V
2
-
-
A
-
A
- MHz
1.3
ts
Storage time
tf
File time
IC=12A, VCC=30V
IBI = -'B2 = 1.5 A
- 0.85 1.5 MS
- 0.14 0.8
(*) Pulse Duration = 300 us, Duty Cycle <= 2%
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