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2SD871 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге
Компоненты Описание
производитель
2SD871
Iscsemi
Inchange Semiconductor Iscsemi
2SD871 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD871
DESCRIPTION
·With TO-3 package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·For color TV horizontal output applications
PINNING(see fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-collector voltage
VEBO
Emitter-base voltage
IC
Collector current
IE
Emitter current
PT
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
VALUE
1500
600
5
6
-6
50
150
-65~150
UNIT
V
V
V
A
A
W

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