2N6544 Просмотр технического описания (PDF) - Inchange Semiconductor

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2N6544

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2N6544

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1.0A

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2.0A

VBE(sat) Base-Emitter Saturation Voltage

IC= 5A; IB= 1.0A

IEBO

Emitter Cutoff Current

VEB= 9V; IC= 0

hFE-1

DC Current Gain

IC= 2.5A; VCE= 3V

hFE-2

DC Current Gain

IC= 5A; VCE= 3V

fT

Current Gain-Bandwidth Product

IC= 0.3A ; VCE= 10V; ftest=1.0MHz

Switching times-Resistive Load

td

Delay Time

tr

Rise Time

ts

Storage Time

tf

Fall Time

IC= 5A , VCC= 250V,

IB1= -IB2= 1A, tp= 0.1ms

Duty Cycle≤2.0%

MIN MAX UNIT

300

V

1.5

V

5.0

V

1.6

V

1.0 mA

12

60

7

35

6.0 35 MHz

0.05 μs

1.0 μs

4.0 μs

1.0 μs

isc website：www.iscsemi.com

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