C3181 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
C3181 Datasheet PDF : 2 Pages
| |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC3181
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0
120
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
VBE(on) Base-Emitter On Voltage
IC= 4A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0
2.0 V
1.5 V
5 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
5 μA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
55
160
hFE-2
DC Current Gain
IC= 4A; VCE= 5V
35
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1.0MHz
fT
Current-Gain—Bandwidth Product
IC= 1A; VCE= 5V
190
pF
30
MHz
hFE-1 Classifications
R
O
55-110 80-160
isc Website：www.iscsemi.cn
2
Share Link: 