C3181 Просмотр технического описания (PDF) - Inchange Semiconductor

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C3181

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

2SC3181

DESCRIPTION

·Low Collector Saturation Voltage-

: VCE(sat)= 2.0V(Max.) @IC= 6A

·Good Linearity of hFE

·Complement to Type 2SA1264

APPLICATIONS

·Power amplifier applications

·Recommend for 55W high fidelity audio frequency

amplifier output stage applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

120

V

VCEO Collector-Emitter Voltage

120

V

VEBO Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

8

A

IB

Base Current-Continuous

Collector Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

0.8

A

80

W

150

℃

Tstg

Storage Temperature Range

-55~150 ℃

isc Website：www.iscsemi.cn

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