8050S Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd
Номер в каталоге
Компоненты Описание
производитель
8050S Datasheet PDF : 1 Pages
| |||
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
8050S TRANSISTOR（ NPN ）
FEATURES
Power dissipation
PCM : 0.625 W（Tamb=25℃）
Collector current
ICM : 0.5 A
Collector-base voltage
V(BR)CBO : 40 V
Operating and storage junction temperature range
TJ，Tstg: -55℃ to +150℃
TO— 92
1.EMITTER
2. COLLECTOR
3.BASE
123
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter
Symbol
Test conditions
MIN
TYP
MAX
Collector-base breakdown voltage
V(BR)CBO
Ic= 100μＡ , IE=0
40
Collector-emitter breakdown voltage V(BR)CEO Ic= 1 mA， IB=0
25
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA， IC=0
5
Collector cut-off current
ICBO
VCB= 40 V , IE=0
0.1
Collector cut-off current
ICEO
VCE= 20 V , IB=0
0.1
Emitter cut-off current
IEBO
VEB= 3 V， IC=0
0.1
UNIT
V
V
V
μA
μA
μA
DC current gain
hFE（1）
VCE= 1 V, IC= 50m A
85
300
hFE（2）
VCE= 1 V, IC= 500m A
50
Collector-emitter saturation voltage
VCE(sat)
IC=500mA, IB=50 mA
0.6
V
Base-emitter saturation voltage
Transition frequency
CLASSIFICATION OF hFE(1)
Rank
VBE(sat)
IC=500mA, IB=50 mA
VCE= 6 V, IC=20mA
fT
150
f =30MHz
B
C
1.2
V
MHz
D
Range
85-160
120-200
160-300
Share Link: 