1N60AL-A-T92-K Просмотр технического описания (PDF) - Unisonic Technologies
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1N60AL-A-T92-K Datasheet PDF : 8 Pages
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1N60A
TYPICAL CHARACTERISTICS (Cont.)
Breakdown Voltage vs. Temperature
1.2 VGS=0V
ID=250μA
1.1
1.0
0.9
0.8
-100 -50 0
50 100 150 200
Junction Temperature, TJ (°C)
Max. Safe Operating Area
Operation in This
101
Area is Limited by
RDS(on)
100μs
1ms
100
10ms
10-1
Tc=25°C
TJ=150°C
Single Pulse
10-2
100
101
102
103
Drain-Source Voltage, VDS (V)
Thermal Response
0.5
100
0.2
0.1 0.05
0.02
10-1
0.01
Single pulse
θJC (t) = 3.45°C/W Max.
Duty Factor, D=t1/t2
TJM-TC=PDM×θJC (t)
10-5 10-4 10-3 10-2 10-1 100 101
Square Wave Pulse Duration, t1 (sec)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Power MOSFET
On-Resistance vs. Temperature
3.0
VGS=10V
ID=0.5A
2.5
2.0
1.5
1.0
0.5
0.0
-100 -50 0
50 100 150 200
Junction Temperature, TJ (°C)
Max. Drain Current vs. Case Temperature
1.0
0.5
0.0
25
50
75
100 125 150
Case Temperature, TC (°C)
7 of 8
QW-R502-091,E
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