TIP41D Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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TIP41D Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TIP41D
VCEO(SUS) Collector-Emitter Sustaining Voltage TIP41E
IC= 30mA; IB= 0
TIP41F
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A
VBE(on) Base-Emitter On Voltage
IC= 6A; VCE= 4V
TIP41D
VCE= 160V; VBE= 0
ICES
Collector Cutoff Current
TIP41E
VCE= 180V; VBE= 0
TIP41F
VCE= 200V; VBE= 0
ICEO
Collector Cutoff Current
VCE= 90V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 0.3A ; VCE= 4V
hFE-2
DC Current Gain
IC= 3A ; VCE= 4V
fT
Current-Gain—Bandwidth Product
IC= 0.5A ; VCE= 10V
Switching Time
ton
Turn-On Time
toff
Turn-Off Time
IC= 6A; IB1= -IB2= 0.6A;
VBE(off)= 4V, RL= 5Ω
TIP41D /E/F
MIN MAX UNIT
120
140
V
160
1.5
V
2.0
V
0.4
mA
0.7
mA
1.0
mA
30
15
3
MHz
0.6
μs
1.0
μs
SPTECH website：www.superic-tech.com
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