TIP41D Просмотр технического описания (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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TIP41D Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistors
DESCRIPTION
·DC Current Gain -hFE = 30(Min)@ IC= 0.3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 120V(Min)-TIP41D;140V(Min)-TIP41E
160V(Min)-TIP41F
·Complement to Type TIP42D/42E/42F
APPLICATIONS
·Designed for use in general purpose amplifer and switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
TIP41D
160
VCBO
Collector-Base Voltage TIP41E
180
V
TIP41F
200
TIP41D
120
VCEO
Collector-Emitter Voltage TIP41E
140
V
TIP41F
160
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
Base Current
Collector Power Dissipation
PC
TC=25℃
Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
3
A
65
W
2
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.92 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 62.5 ℃/W
SPTECH website：www.superic-tech.com
TIP41D /E/F
1
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