2N6549 Просмотр технического описания (PDF) - Unspecified
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2N6549 Datasheet PDF : 1 Pages
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^s.ml-donaiKiko'i Lpioaucti,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2N6548
2N6549
NPN SILICON DARLINGTON TRANSISTORS
TO-202 CASE
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Col lector Current
Base Current
Power Dissipation
Power Dissipation (Tc=25°C)
Operating and Storage Junction Temperature
SYMBOL
VCBO
VCES
VCEO
VEBO
ic
IB
PD
PD
TJ,
50
12
2.0
100
2.0
10
-65 TO +150
Thermal Res i stance
Thermal Resistance
QJA
62.5
©JC
12.5
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
2N6548
MIN
MAX
ICBO
VcB=30V
100
IEBO VEB=IOV
100
BVCBO
BVCES
BVEBO
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(ON)
hFE
hFE
hFE
IC-100uA
IC=100yA
l£=10yA
IC-1.0A, lB=2.0mA
IC=2.0A, lB=4.0mA
IC-l.OA, lB=2.0mA
Vc£=5.0V, lc=1-OA
Vc£=5.0V, lc=200mA
VcE=5-OV, lc=500mA
VCE=S.OV, IC-I.OA
50
40
12
25,000
15,000
5,000
1.5
2.0
2.0
2.0
150,000
hfe
VCE=5.0V, lc=50mA, f=1.0kHz
20,000
fT
VCE=5-OV, lc=200mA, f=100MHz
Cob
VCB=IOV, IE=O, f-i.0MHz
100
7.0
2N6549
MIN
MAX
«™^"^™
100
100
50
40
12
1.5
2.0
2.0
2.0
15,000 150,000
10,000
3,000
15,000
100
7.0
UNIT
V
V
V
V
A
mA
W
W
°c
°c/w
°c/w
UNIT
nA
nA
V
V
V
V
V
V
V
MHz
PF
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensionswithout
notice information famished by NJ Semi-Conductorsis believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductorsassumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Cortductors encourages customers to verify that datasheets are current before placing orders.
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